National Science Library of Georgia

Modeling nanowire and double-gate junctionless field-effect transistors / (Record no. 523193)

MARC details
000 -LEADER
fixed length control field 02210nam a22003378i 4500
001 - CONTROL NUMBER
control field CR9781316676899
003 - CONTROL NUMBER IDENTIFIER
control field UkCbUP
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20200124160338.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION
fixed length control field m|||||o||d||||||||
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr||||||||||||
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151216s2018||||enk o ||1 0|eng|d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781316676899 (ebook)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 9781107162044 (hardback)
040 ## - CATALOGING SOURCE
Original cataloging agency UkCbUP
Language of cataloging eng
Description conventions rda
Transcribing agency UkCbUP
050 00 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.95
Item number .J39 2018
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815/284
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Jazaeri, Farzan,
Relator term author.
245 10 - TITLE STATEMENT
Title Modeling nanowire and double-gate junctionless field-effect transistors /
Statement of responsibility, etc Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne.
264 #1 - Production, Publication, Distribution, Manufacture, and Copyright Notice (R)
Place of production, publication, distribution, manufacture (R) Cambridge :
Name of producer, publisher, distributor, manufacturer (R) Cambridge University Press,
Date of production, publication, distribution, manufacture, or copyright notice 2018.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (xix, 233 pages) :
Other physical details digital, PDF file(s).
336 ## - Content Type (R)
Content type term (R) text
Content type code (R) txt
Source (NR) rdacontent
337 ## - Media Type (R)
Media type term (R) computer
Media type code (R) c
Source (NR) rdamedia
338 ## - Carrier Type (R)
Carrier type term (R) online resource
Carrier type code (R) cr
Source (NR) rdacarrier
500 ## - GENERAL NOTE
General note Title from publisher's bibliographic system (viewed on 26 Feb 2018).
520 ## - SUMMARY, ETC.
Summary, etc The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Metal semiconductor field-effect transistors.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanowires.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Sallese, Jean-Michel,
Relator term author.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
International Standard Book Number 9781107162044
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1017/9781316676899">https://doi.org/10.1017/9781316676899</a>

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