National Science Library of Georgia

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Understanding modern transistors and diodes / David L. Pulfrey.

By: Material type: TextTextPublisher: Cambridge : Cambridge University Press, 2010Description: 1 online resource (xvii, 335 pages) : digital, PDF file(s)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9780511840685 (ebook)
Other title:
  • Understanding Modern Transistors & Diodes
Subject(s): Additional physical formats: Print version: : No titleDDC classification:
  • 621.381 22
LOC classification:
  • TK7871.9 .P815 2010
Online resources: Summary: Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
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Title from publisher's bibliographic system (viewed on 05 Oct 2015).

Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses

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