Fundamental physics of amorphous semiconductors : proceedings of the Kyoto Summer Institute, Kyoto, Japan, September 8-11, 1980 / editor F. Yonezawa.
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TextLanguage: English Series: Springer series in solid-state sciences ; 25Publication details: Berlin ; New York : Springer-Verlag, 1981.Description: viii, 181 p. : ill. ; 24 cmISBN: - 3540106340
- 537.6/22 19
- QC611.8.A5 K96 1980
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Includes bibliographies.
Contents: What are Non-Crystalline Semiconductors.- Defects in Covalent Amorphous Semiconductors.- Surface Effects and Transport Properties in Thin Films of Hydrogenated Silicon.- The Past, Present and Future of Amorphous Silicon.- Doping and the Density of States of Amorphous Silicon.- The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon.- New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs.- Chemical Bonding of Alloy Atoms in Amorphous Silicon.- Photo-Induced Phenomena in Amorphous Semiconductors.- Theory of Electronic Properties of Amorphous Semiconductors.- Some Problems of the Electron Theory of Disordered Semiconductors.- The Anderson Localisation Problem.- Summary Talk.- Seminars Given During the KSI '80.- Photograph of the Participants of the KSI '80.- List of Participants.
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