000			02302nam a22002537a 4500
003			Ge_NSL
005			20240918082325.0
008			160323s1985 de ||||| |||| 00| 0 eng d
020			_a3540151435
020			_a9783540151432
041			_aeng
080			_a53
245			_aPolycristalline Semiconductors : _bPhysical Properties and Applications : Proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice,Italy, July 1-15, 1984 / _cEditor G. Harbeke.
264			_aBerlin : _bSpringer, _c1985.
300			_aviii, 245 p. ; _c24 cm.
490			_aSpringer series in solid-state sciences ; _v57
505			_a I Fundamental Aspects of Grain Boundaries.- Atomic Structure of Grain Boundaries. (With 5 Figures).- Computer Calculations of Grain Boundary Energies in Germanium and Silicon. (With 4 Figures).- The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials. (With 12 Figures).- Grain Boundary Segregation. Grain Boundary Diffusion. (With 22 Figures).- II Electronic Characterization of Grain Boundaries.- Electronic Properties of Grain Boundaries. (With 15 Figures).- Electronic States at Grain Boundaries in Semiconductors. (With 15 Figures).- Electrical Properties of Grain Boundaries in the Presence of Deep Bulk Traps. (With 7 Figures).- Beam Induced Current Characterization in Polycrystalline Semiconductors. (With 17 Figures).- III Properties and Applications of Polycrystalline Silicon.- Optical Properties of Polycrystalline Silicon Films. (With 10 Figures).- Polycrystalline Silicon in Integrated Circuits. (With 13 Figures).- IV Applications of Polycrystalline Semiconductor Compounds.- Electroluminescence in Polycrystalline Semiconductors. (With 21 Figures).- The Electrical Properties of Oxides Under Conditions of Oxidation, Reduction and Catalysis.- Evolution of Physical Models for ZnO-Varistors - A Review. (With 18 Figures).- Index of Contributors.
653			_aფიზიკა
653			_aნახევარგამტარები
653			_a პოლიკრისტალური ნახევარგამტარები
653			_aკრისტალები
700			_aHarbeke, G. _eრედაქტორი _9302493
942			_2udc _cBK
999			_c49780 _d49780