| 000 | 02439nam a22003858i 4500 | ||
|---|---|---|---|
| 001 | CR9780511525247 | ||
| 003 | UkCbUP | ||
| 005 | 20200124160234.0 | ||
| 006 | m|||||o||d|||||||| | ||
| 007 | cr|||||||||||| | ||
| 008 | 090406s1991||||enk o ||1 0|eng|d | ||
| 020 | _a9780511525247 (ebook) | ||
| 020 | _z9780521371568 (hardback) | ||
| 020 | _z9780521019347 (paperback) | ||
| 040 |
_aUkCbUP _beng _erda _cUkCbUP |
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| 050 | 0 | 0 |
_aQC611.8.S5 _bS76 1991 |
| 082 | 0 | 0 |
_a621.381/52 _220 |
| 100 | 1 |
_aStreet, R. A., _eauthor. |
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| 245 | 1 | 0 |
_aHydrogenated amorphous silicon / _cR.A. Street. |
| 264 | 1 |
_aCambridge : _bCambridge University Press, _c1991. |
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| 300 |
_a1 online resource (xiv, 417 pages) : _bdigital, PDF file(s). |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 490 | 1 | _aCambridge solid state science series | |
| 500 | _aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). | ||
| 505 | 2 | _a1. Introduction -- 2. Growth and structure of amorphous silicon -- 3. The electronic density of states -- 4. Defects and their electronic states -- 5. Substitutional doping -- 6. Defect reactions, thermal equilibrium and metastability -- 7. Electronic transport -- 8. Recombination of excess carriers -- 9. Contacts, interfaces and multilayers -- 10. Amorphous silicon device technology. | |
| 520 | _aThis book describes the properties and device applications of hydrogenated amorphous silicon. It covers the growth, the atomic and electronic structure, the properties of dopants and defects, the optical and electronic properties which result from the disordered structure and finally the applications of this technologically very important material. There is also an important chapter on contacts, interfaces and multilayers. The main emphasis of the book is on the new physical phenomena which result from the disorder of the atomic structure. The book will be of major importance to those who are researching or studying the properties and applications of a-Si:H. It will have a wider interest for anyone working in semiconductor physics and electronic engineering in general. | ||
| 650 | 0 | _aSilicon. | |
| 650 | 0 | _aAmorphous semiconductors. | |
| 650 | 0 | _aSurface chemistry. | |
| 776 | 0 | 8 |
_iPrint version: _z9780521371568 |
| 830 | 0 | _aCambridge solid state science series. | |
| 856 | 4 | 0 | _uhttps://doi.org/10.1017/CBO9780511525247 |
| 999 |
_c517883 _d517881 |
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