000 02244nam a22003618i 4500
001 CR9780511599828
003 UkCbUP
005 20200124160234.0
006 m|||||o||d||||||||
007 cr||||||||||||
008 090721s1993||||enk o ||1 0|eng|d
020 _a9780511599828 (ebook)
020 _z9780521419192 (hardback)
020 _z9780521017848 (paperback)
040 _aUkCbUP
_beng
_erda
_cUkCbUP
050 0 0 _aQC611.8.C64
_bS34 1993
082 0 0 _a621.3815/2
_220
100 1 _aSchubert, E. Fred,
_eauthor.
245 1 0 _aDoping in III-V semiconductors /
_cE. Fred Schubert.
264 1 _aCambridge :
_bCambridge University Press,
_c1993.
300 _a1 online resource (xxii, 606 pages) :
_bdigital, PDF file(s).
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
490 1 _aCambridge studies in semiconductor physics and microelectronic engineering ;
_v1
500 _aTitle from publisher's bibliographic system (viewed on 05 Oct 2015).
520 _aThis is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.
650 0 _aCompound semiconductors.
650 0 _aSemiconductor doping.
776 0 8 _iPrint version:
_z9780521419192
830 0 _aCambridge studies in semiconductor physics and microelectronic engineering ;
_v1.
856 4 0 _uhttps://doi.org/10.1017/CBO9780511599828
999 _c517907
_d517905