000			03410nam a22004098i 4500
001			CR9780511565007
003			UkCbUP
005			20200124160242.0
006			m|||||o||d||||||||
007			cr||||||||||||
008			090518s1996||||enk o ||1 0|eng|d
020			_a9780511565007 (ebook)
020			_z9780521373760 (hardback)
020			_z9780521616065 (paperback)
040			_aUkCbUP _beng _erda _cUkCbUP
050	0	0	_aQC176.8.R3 _bN35 1996
082	0	0	_a530.4/16 _220
100	1		_aNastasi, Michael Anthony, _d1950- _eauthor.
245	1	0	_aIon-solid interactions : _bfundamentals and applications / _cMichael Nastasi, James W. Mayer, and James K. Hirvonen.
264		1	_aCambridge : _bCambridge University Press, _c1996.
300			_a1 online resource (xxvi, 540 pages) : _bdigital, PDF file(s).
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
490	1		_aCambridge solid state science series
500			_aTitle from publisher's bibliographic system (viewed on 05 Oct 2015).
505	0	0	_gCh. 1. _tGeneral features and fundamental concepts -- _gCh. 2. _tInteratomic potentials -- _gCh. 3. _tDynamics of binary elastic collisions -- _gCh. 4. _tCross-section -- _gCh. 5. _tIon stopping -- _gCh. 6. _tIon range and range distribution -- _gCh. 7. _tRadiation damage and spikes -- _gCh. 8. _tIon-solid simulations and diffusion -- _gCh. 9. _tSputtering -- _gCh. 10. _tOrder-disorder and ion implantation metallurgy -- _gCh. 11. _tIon beam mixing -- _gCh. 12. _tPhase transformations -- _gCh. 13. _tIon beam assisted deposition -- _gCh. 14. _tApplications of ion beam processing techniques -- _tAppendix A: Crystallography -- _tAppendix B: Table of the elements -- _tAppendix C: Density of states -- _tAppendix D: Derivation of the Thomas-Fermi differential equation -- _tAppendix E: Center-of-mass and laboratory scattering angles -- _tAppendix F: Miedema's semi-empirical model for the enthalpy of formation in the liquid and solid states -- _tAppendix G: Implantation metallurgy -- study of equilibrium alloys.
520			_aModern technology depends on materials with precisely controlled properties. Ion beams are a favoured method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition to integrated circuit technology, ion beams are used to modify the mechanical, tribological and chemical properties of metal, intermetallic and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering and material science issues associated with metastable phase synthesis.
650		0	_aSolids _xEffect of radiation on.
650		0	_aIon bombardment.
650		0	_aIon implantation _xIndustrial applications.
700	1		_aMayer, James W., _d1930- _eauthor.
700	1		_aHirvonen, J. K. _q(James Karsten), _d1943- _eauthor.
776	0	8	_iPrint version: _z9780521373760
830		0	_aCambridge solid state science series.
856	4	0	_uhttps://doi.org/10.1017/CBO9780511565007
999			_c518606 _d518604