000			02210nam a22003378i 4500
001			CR9781316676899
003			UkCbUP
005			20200124160338.0
006			m|||||o||d||||||||
007			cr||||||||||||
008			151216s2018||||enk o ||1 0|eng|d
020			_a9781316676899 (ebook)
020			_z9781107162044 (hardback)
040			_aUkCbUP _beng _erda _cUkCbUP
050	0	0	_aTK7871.95 _b.J39 2018
082	0	0	_a621.3815/284 _223
100	1		_aJazaeri, Farzan, _eauthor.
245	1	0	_aModeling nanowire and double-gate junctionless field-effect transistors / _cFarzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne.
264		1	_aCambridge : _bCambridge University Press, _c2018.
300			_a1 online resource (xix, 233 pages) : _bdigital, PDF file(s).
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
500			_aTitle from publisher's bibliographic system (viewed on 26 Feb 2018).
520			_aThe first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
650		0	_aMetal semiconductor field-effect transistors.
650		0	_aNanowires.
700	1		_aSallese, Jean-Michel, _eauthor.
776	0	8	_iPrint version: _z9781107162044
856	4	0	_uhttps://doi.org/10.1017/9781316676899
999			_c523193 _d523191