Polycristalline Semiconductors : Physical Properties and Applications : Proceedings of the International School of Materials Science and Technology at the Ettore Majorana Centre, Erice,Italy, July 1-15, 1984 / Editor G. Harbeke.

I Fundamental Aspects of Grain Boundaries.- Atomic Structure of Grain Boundaries. (With 5 Figures).- Computer Calculations of Grain Boundary Energies in Germanium and Silicon. (With 4 Figures).- The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials. (With 12 Figures).- Grain Boundary Segregation. Grain Boundary Diffusion. (With 22 Figures).- II Electronic Characterization of Grain Boundaries.- Electronic Properties of Grain Boundaries. (With 15 Figures).- Electronic States at Grain Boundaries in Semiconductors. (With 15 Figures).- Electrical Properties of Grain Boundaries in the Presence of Deep Bulk Traps. (With 7 Figures).- Beam Induced Current Characterization in Polycrystalline Semiconductors. (With 17 Figures).- III Properties and Applications of Polycrystalline Silicon.- Optical Properties of Polycrystalline Silicon Films. (With 10 Figures).- Polycrystalline Silicon in Integrated Circuits. (With 13 Figures).- IV Applications of Polycrystalline Semiconductor Compounds.- Electroluminescence in Polycrystalline Semiconductors. (With 21 Figures).- The Electrical Properties of Oxides Under Conditions of Oxidation, Reduction and Catalysis.- Evolution of Physical Models for ZnO-Varistors - A Review. (With 18 Figures).- Index of Contributors.